A 1735 GHz Broadband, High Efciency PHEMT Power Amplier Using Synthesized Transformer Matching Technique

  • Author
    IEEE Trans. Microw. Theory Tech., vol 60, no. 1
  • Published in
    P.-C. Huang, Z.-M. Tsai, K.-Y. Lin, Member, and H. Wang
  • Time
    Jan 01, 2012
  • Abstract

     A 17 GHz to 35 GHz broadband power amplifier (PA) is proposed using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P1dB of 22 dBm, Psat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.