Publications

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

  • Author
    Kun-You Lin, Yu-Jiu Wang, Dow-Chih Niu, and Huei Wang
  • Published in
    IEEE Trans. Microw. Theory Tech., vol. 51, no. 4, pp. 1076-1085
  • Time
    Apr 01, 2003
  • Abstract

    This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, a Q- and V- band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The Q-band SPDT switch has a measured isolation better than 30dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the V-band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMB frequency range.